Manufacture and characterization of vanadium dioxide (vo2) films deposited by sputtering with pulsed direct current

Authors

DOI:

https://doi.org/10.15665/rp.v19i1.2532

Keywords:

Sputtering, vanadium dioxide, pressure, inverse time, power, frequency, flux

Abstract

In this article show thin films of vanadium dioxide were grown on glass and sapphire substrates by the pulsed-dc sputtering technique. To obtain the correct composition and crystal structure required the exploration of a range of conditions for deposition parameters, since there are no previous reports of VO2 growth by pulsed-dc sputtering. The crystal structure of the samples was analyzed by x-ray diffraction (XRD) and their electrical properties were characterized measuring resistance as a function of temperature. The monoclinic VO2 phase was obtained with a 90 sccm argon flux, total sputtering pressure of 6.03mTorr, oxygen partial pressure of  ~ 0.33 mTorr, gun power of 300 W, 150 kHz frequency, inverse time of  2.5 µsec and substrate temperature of 550º C. Films grown on sapphire exhibited better crystal quality and their resistance change during the transition was greater than three orders of magnitude, with a narrow (3º) hysteresis curve, while those grown on glass exhibited a resistance change of over two orders of magnitude and a broad (12º) hysteresis curve.

References

. Morin, F. J. Oxides which show a metal to insulator transition at the Neel temperature. Physical Review Letters 3, 34 (1959).

. C.R. Aita and C. J. Gawlak, The dependence of aluminum nitride film crystallography on sputtering plasma composition. Journal of Vacuum Science and Technology A1, 403 (1983)

. W.D. Sproul, D.J. Christie, D.C. Carter. Control of reactive sputtering processes. Thin Solid Films 491, 1-17 (2005).

. Universidad de Vigo. España. Técnicas de producción de placas delgadas. http://webs.uvigo.es/jserra/

Consultada 5 de Julio de 2011

. J. Yoon, Aluminum/Aluminum oxide structured microsplasma devices: Paschen´s law and applications. Master of Science in Electrical and Computer Engineering. Universidad of Illinois. Urbana EE.UU. (2010).

. G. Torcal Sarasa, Deposición de capas constituyente de recubrimientos de baja emisividad. Trabajo académicamente dirigido de la licenciatura en Física. Universidad de Zaragoza, Departamento de Física Aplicada (2005).

. K. Jagannadham, A. K. Sharma, Q. Wei, R. Kalyanraman, and J. Narayan, Structural characteristics of AlN films deposited by pulsed laser deposition and reactive magnetron sputtering: A comparative study. Journal of Vacuum Science and Technology A 16, 5 (1998).

. W.D. Sproul, D.J. Christie, D.C. Carter. Control of reactive sputtering processes. Thin Solid Films 491, 1-17 (2005).

. C.R. Aita and C. J. Gawlak, The dependence of aluminum nitride film crystallography on sputtering plasma composition. Journal of Vacuum Science and Technology A 1, 403 (1983).

Downloads

Published

2021-02-17

Issue

Vol. 19 No. 1 (2021): Enero - Junio

Section

Articles

License

Copyright (c) 2021 Dixon David Salcedo Morillo, Wilmar Torné Sandoval, José Solorzano , Diana Suarez, Carlos Henríquez, Albeiro Cort{es

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

The authors to publish in this journal agree to the following conditions:

  1. The authors transfer the copyright and give the the journal first publication right of the work registered with Creative Commons Attribution License, which allows third parties to use the published work on the condition of always mentioning the authorship and first publication in this journal.
  2. The authors may perform other independent and additional contractual arrangements for the non-exclusive distribution of the version of the article published in this issue (E.g., Inclusion in an institutional repository or publication in a book), it must be indicated clearly that the work was first published in this journal.
  3. It allows and encourages the authors to publish their work online (eg institutional or personal pages) before and during the review and publication process. It can lead to productive exchanges and greater and faster dissemination of the published work (see The Effect of Open Access)

Instructions to fill out Certificate of Originality and Copyright Assignment

  1. Click here and get the forms of Certificate of Originality and Copyright Assignment  .
  2. In each field to fill out, click and complete the corresponding information.
  1. Once the fields are filled out, at the end of the form copy your scanned signature or digital signature. Please adjust the size of the signature on the form.
  2. Finally, you can save them as pdf files and send them through the OJS platform as an attachment.