Respuesta Fotoluminiscente observada en muestras de InP y GaAs no dopadas y dopadas Cr y S

Authors

  • francisco racedo universidad del atlantco
  • J. Jacome Mejia
  • S. E. Zambrano

DOI:

https://doi.org/10.15665/rp.v19i1.2439

Abstract

In this work semiconductor sample of GaAs and InP doped and non-doped with a fast mapping equipment by photoluminescence at room temperature. The samples were gown by the LEC technique, with the photo luminescent technique the images were obtained and line spectrum to analyze the parameters: maximum wavelength peak, intensity of the maximum wavelength peak,  the wide spectral in the middle of the maximum height (FWHM) and the integrated signal for all the samples. The spectrum of the not dope GaAs showed 2 peaks around 1,426 eV and another in 1,36 eV, which corresponds to superficial defect originated by the oxidation process of itself. The spectrum of the GaAs:Cr showed us a peak around 1,437, it did not present any defect zone when treated chemically, due to the presence of the Cr en el GaAs that  originates an acceptor deep level located in 0,63 eV and under the conduction band. The spectrum of the InP:S showed a peak around the 1,375 eV and when it was treated chemically showed 2 peaks: 1,380eV with acetone and 1,392 eV with sulfuric acid.

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Published

2021-02-17

Issue

Vol. 19 No. 1 (2021): Enero - Junio

Section

Articles

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Copyright (c) 2021 francisco racedo, J. Jacome Mejia, S. E. Zambrano

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